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| H5N5006FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1112 (Z) 1st. Edition Mar. 2001 Features * * * * * Low on-resistance: R DS(on) = 2.5 typ. Low leakage current: IDSS = 1 A max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A) Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A) Avalanche ratings Outline TO-220FM w w .D w G t a D S S a e h 3 t e U 4 .c m o 12 1. Gate 2. Drain 3. Source w w w .D a aS t ee h 4U t om .c H5N5006FM Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Tch 150C Symbol VDSS VGSS ID ID Note1 (pulse) Ratings 500 30 3 12 3 Unit V V A A A A A W C/W C C I DR I DR Note1 (pulse) 12 3 25 5.0 150 -55 to +150 I AP Note3 Pch Note2 ch-c Tch Tstg 2 H5N5006FM Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS 500 -- -- 3.0 -- 1.5 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 2.5 2.5 365 35 8 20 12 48 15 14 2 8 0.85 270 0.8 Max -- 0.1 1 4.5 3.0 -- -- -- -- -- -- -- -- -- -- -- 1.3 -- -- S pF pF pF ns ns ns ns nC nC nC V ns C Unit V A A V Test Conditions I D = 10 mA, VGS = 0 VGS = 30 V, VDS = 0 VDS = 500 V, VGS = 0 VDS = 10 V, ID = 1 mA I D = 1.5 A, VGS = 10 V Note4 I D = 1.5 A, VDS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz I D = 1.5 A VGS = 10 V RL = 167 Rg = 10 VDD = 400 V VGS = 10 V ID = 3 A I F = 3 A, VGS = 0 I F = 3 A, VGS = 0 diF/dt = 100 A/s Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr 3 H5N5006FM Main Characteristics Power vs. Temperature Derating 40 50 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 PW Maximum Safe Operation Area 1 10 0 0s s s ho Pch (W) 30 ID (A) 1 m 10 = D Channel Dissipation Drain Current C (T m O c s( 20 pe 1s = ra 10 Operation in this area is limited by RDS(on) 25 n C ) tio t) Ta = 25C 0.3 1 3 10 30 100 300 1000 0 50 100 Case Temperature 150 Tc (C) 200 0.005 0.1 Drain to Source Voltage VDS (V) Typical Output Characteristics 5 Typical Transfer Characteristics 5 Pulse Test ID (A) 4 10 V 8V 6V V DS = 10 V ID (A) 4 Pulse Test 3 5.5 V 3 Drain Current 2 Drain Current 2 Tc = 75C 25C -25C 2 4 6 Gate to Source Voltage 8 10 VGS (V) 1 5V VGS = 4.5V 1 0 4 8 12 16 20 Drain to Source Voltage VDS (V) 0 4 H5N5006FM Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) Pulse Test Drain to Source on State Resistance RDS(on) () 20 Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 5 2 1 0.5 0.2 0.1 0.1 0.2 1 0.5 Drain Current 2 5 VGS = 10 V, 15 V 16 12 ID=3A 8 2A 4 1A 12 4 8 Gate to Source Voltage 0 16 VGS (V) 20 10 ID (A) Static Drain to Source on State Resistance RDS(on) () Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 10 Pulse Test 8 V GS = 10 V ID=3A 10 5 Forward Transfer Admittance vs. Drain Current Tc = -25C 2 1 0.5 25C 75C 6 4 1A 2A 2 0 -40 0.2 0.1 0.1 0.2 0.5 1 V DS = 10 V Pulse Test 2 5 10 0 40 80 120 160 Case Temperature Tc (C) Drain Current ID (A) 5 H5N5006FM Body-Drain Diode Rreverse Recovery Time 1000 1000 500 Typical Capacitance vs. Drain to Source Voltage Ciss VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 200 100 50 20 10 5 2 1 200 100 50 Coss Crss 20 10 0.1 di / dt = 100 A / s V GS = 0, Ta = 25C 2 0.2 1 5 0.5 10 Reverse Drain Current IDR (A) 0 100 50 150 Drain to Source Voltage 250 200 VDS (V) Dynamic Input Characteristics VDS (V) I D= 3 A VGS 800 V DD = 100 V 250 V 400 V VDS 16 VGS (V) 1000 20 1000 300 Switching Characteristics V GS = 10 V, V DD = 250 V PW = 5 s, duty < 1 % R G =10 t d(off) t d(on) Switching Time t (ns) Gate to Source Voltage tf 100 30 10 tr 3 1 0.1 0.2 Drain to Source Voltage 600 12 400 8 200 V DD = 400 V 250 V 100 V 8 16 Gate Charge 24 32 Qg (nC) 4 0 40 0 2 0.5 1 Drain Current 5 10 ID (A) 20 6 H5N5006FM Reverse Drain Current vs. Source to Drain Voltage 5 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Case Temperature 5 V DS = 10 V I D = 10mA 1mA 3 0.1mA IDR (A) 4 4 Reverse Drain Current 3 5, 10 V V GS = 0 V 1 2 2 1 0 -50 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) 0 50 100 150 Case Temperature Tc (C) 200 Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 250 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 7 H5N5006FM Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 Normalized Transient Thermal Impedance s (t) D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.02 1 0.0 tp ho 1s 0.01 uls e ch - c(t) = s (t) * ch - c ch - c = 5.00C/W, Tc = 25C PDM D= PW T PW T 0.003 0.001 10 100 1m 10 m 100 m Pulse Width PW (s) 1 10 8 H5N5006FM Package Dimensions 10.0 0.3 7.0 0.3 3.2 0.2 2.8 0.2 2.5 0.2 As of January, 2001 Unit: mm 0.6 5.0 0.3 2.0 0.3 1.2 0.2 1.4 0.2 12.0 0.3 4.45 0.3 2.5 14.0 1.0 0.5 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) TO-220FM -- Conforms 1.8 g 0.7 0.1 2.54 0.5 2.54 0.5 17.0 0.3 9 H5N5006FM Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 10 |
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